Note: Image shown is a representation only.
IRF4668 N-Channel Power MOSFET – 40V, 160A, Low RDS(on), D2PAK / TO-263
SPECIFICATION
-
Transistor Type: N-Channel MOSFET
-
Package: D2PAK / TO-263
-
Drain-Source Voltage (VDS): 40V
-
Continuous Drain Current (ID): 160A
-
Gate-Source Voltage (VGS): ±20V
-
RDS(on): 3.2mΩ (Typical)
-
Power Dissipation: 300W (approx.)
-
Gate Threshold Voltage: 2V – 4V
-
Operating Temperature: –55°C to +175°C
-
Mounting Type: DIP
₹319.00 (Incl. GST)
Need Help or Support?
Click Here
Free Delivery on all
orders above ₹1999
Unbeatable prices and monthly deals.
- Didn’t find what you are looking for?
CONTACT US
Payment Methods:
The IRF4668 is a high-performance N-Channel Power MOSFET designed for ultra-low RDS(on) switching, high current handling, and maximum efficiency in compact power systems.
With a drain current capability of 160A and extremely low conduction losses, it is widely used in motor controllers, high-current DC switching, battery power stages, inverters, and industrial power circuits.
Its rugged design and high efficiency make it ideal for heavy-duty loads and high-frequency switching applications.
APPLICATION
-
High-current DC motor controllers
-
Battery management & protection circuits
-
Power inverters & SMPS
-
High-efficiency DC-DC converters
-
Robotics and heavy load switching
-
Automotive electronics
-
Industrial power equipment
-
Solar charge controllers








Reviews
Clear filtersThere are no reviews yet.