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IRF640N N-Channel Power MOSFET – 200V, 18A, TO-220
SPECIFICATION
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Transistor Type: N-Channel MOSFET
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Package: TO-220
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Drain-Source Voltage (VDS): 200V
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Continuous Drain Current (ID): 18A
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Gate-Source Voltage (VGS): ±20V
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RDS(on): 0.18Ω (Max)
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Power Dissipation: 125W
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Gate Threshold Voltage: 2V – 4V
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Operating Temperature: –55°C to +175°C
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Mounting Type: Through-Hole
₹41.00 (Incl. GST)
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The IRF640N is a high-voltage N-Channel Power MOSFET designed for fast switching and efficient power handling. With a drain-source voltage of 200V and a continuous drain current of 18A, it is widely used in SMPS power supplies, inverter stages, high-voltage drivers, and industrial control circuits.
Its low RDS(on), fast switching capability, and rugged TO-220 package ensure reliable performance in demanding high-voltage applications.
APPLICATION
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SMPS power supplies
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High-voltage DC-DC converters
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Inverter circuits & UPS systems
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Motor drivers
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LED drivers
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High-voltage switching
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Industrial automation equipment
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Power control circuits








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