IRFB4110 N-Channel Power MOSFET – 100V, 120A, Ultra-Low RDS(on), TO-220 - Image 1
IRFB4110 N-Channel Power MOSFET – 100V, 120A, Ultra-Low RDS(on), TO-220 - Image 2
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IRFB4110 N-Channel Power MOSFET – 100V, 120A, Ultra-Low RDS(on), TO-220
IRFB4110 N-Channel Power MOSFET – 100V, 120A, Ultra-Low RDS(on), TO-220 - Image 2

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IRFB4110 N-Channel Power MOSFET – 100V, 120A, Ultra-Low RDS(on), TO-220

SKU: D152

SPECIFICATION

  • Transistor Type: N-Channel MOSFET

  • Package: TO-220

  • Drain-Source Voltage (VDS): 100V

  • Continuous Drain Current (ID): 120A

  • Gate-Source Voltage (VGS): ±20V

  • RDS(on): 0.003Ω (3mΩ, typical)

  • Power Dissipation: 300W

  • Gate Threshold Voltage: 2V – 4V

  • Operating Temperature: –55°C to +175°C

  • Mounting Type: Through-Hole

  • Switching Speed: Fast switching, low gate charge

₹123.00 (Incl. GST)

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    Description

    The IRFB4110 is a high-performance N-Channel Power MOSFET designed for ultra-low RDS(on) operation, high current handling, and exceptional switching efficiency.
    With a drain current of 120A and 100V rating, it is widely used in motor controllers, inverters, battery power systems, high-efficiency SMPS, and industrial automation circuits.
    Its rugged TO-220 package and low conduction losses make it ideal for applications requiring maximum performance and reliability under heavy loads.

    APPLICATION

    • High-power motor controllers

    • Electric vehicle controllers (EV/DIY projects)

    • High-efficiency DC-DC converters

    • Solar inverters & battery chargers

    • UPS & SMPS power supplies

    • Robotics and automation systems

    • High-current switching circuits

    • Power distribution and protection circuits

     

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