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NCE55H12 N-Channel Power MOSFET – 55V, 120A, TO-220 / TO-252
SPECIFICATION
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Transistor Type: N-Channel MOSFET
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Package: TO-220 / TO-252 (varies by model)
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Drain-Source Voltage (VDS): 55V
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Continuous Drain Current (ID): 120A
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Gate-Source Voltage (VGS): ±20V
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RDS(on): 4.5mΩ – 6mΩ (Typical)
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Gate Threshold Voltage: 2V – 4V
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Power Dissipation: 140W (approx.)
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Operating Temperature: –55°C to +175°C
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Mounting Type: Through-Hole / SMD
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Switching: Fast switching, low gate charge
₹71.00 (Incl. GST)
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The NCE55H12 is a high-efficiency N-Channel Power MOSFET designed for high-current, low-loss switching applications. With a drain current of up to 120A and a 55V voltage rating, this MOSFET is ideal for motor drivers, battery systems, power tools, DC-DC converters, and high-power switching circuits.
Its low RDS(on) design reduces heat generation, providing excellent performance in compact and high-efficiency power systems. This MOSFET is commonly used in robotics, automotive DC systems, solar inverters, and industrial control applications.
APPLICATION
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High-current DC motor controllers
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Battery management & protection circuits
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Power tools and electric scooters
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SMPS & DC-DC converters
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Solar charge controllers
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Robotics and automation
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High-current power switching
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Inverter and UPS circuits








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