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4N90 MOSFET – 900V N-Channel Power MOSFET
SPECIFICATION
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Transistor Type: N-Channel MOSFET
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Drain–Source Voltage (Vds): 900V
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Continuous Drain Current (Id): 4A (typical)
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Package: TO-220
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RDS(on): Low resistance for efficient switching
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Gate Threshold Voltage: Standard MOSFET gate level
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High-speed switching performance
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Low gate charge for efficient operation
₹22.00 (Incl. GST)
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The 4N90 MOSFET is a high-voltage, high-efficiency N-Channel power MOSFET designed for SMPS, LED drivers, inverters, and general power switching applications. With a 900V drain–source voltage, low RDS(on), and high-speed switching capability, it delivers stable performance even under demanding loads.
Suitable for compact and energy-efficient power circuits.
APPLICATION
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SMPS power supplies
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LED driver circuits
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Battery chargers
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Inverters & converters
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Power switching and control
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AC–DC power modules
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Home appliances and industrial electronics








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