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IRF4668 N-Channel Power MOSFET – 40V, 160A, Low RDS(on), D2PAK / TO-263

SKU: D150

SPECIFICATION

  • Transistor Type: N-Channel MOSFET

  • Package: D2PAK / TO-263

  • Drain-Source Voltage (VDS): 40V

  • Continuous Drain Current (ID): 160A

  • Gate-Source Voltage (VGS): ±20V

  • RDS(on): 3.2mΩ (Typical)

  • Power Dissipation: 300W (approx.)

  • Gate Threshold Voltage: 2V – 4V

  • Operating Temperature: –55°C to +175°C

  • Mounting Type: DIP

319.00 (Incl. GST)

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    Description

    The IRF4668 is a high-performance N-Channel Power MOSFET designed for ultra-low RDS(on) switching, high current handling, and maximum efficiency in compact power systems.
    With a drain current capability of 160A and extremely low conduction losses, it is widely used in motor controllers, high-current DC switching, battery power stages, inverters, and industrial power circuits.
    Its rugged design and high efficiency make it ideal for heavy-duty loads and high-frequency switching applications.

    APPLICATION

    • High-current DC motor controllers

    • Battery management & protection circuits

    • Power inverters & SMPS

    • High-efficiency DC-DC converters

    • Robotics and heavy load switching

    • Automotive electronics

    • Industrial power equipment

    • Solar charge controllers

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