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IRF640N N-Channel Power MOSFET – 200V, 18A, TO-220

SKU: D151

SPECIFICATION

  • Transistor Type: N-Channel MOSFET

  • Package: TO-220

  • Drain-Source Voltage (VDS): 200V

  • Continuous Drain Current (ID): 18A

  • Gate-Source Voltage (VGS): ±20V

  • RDS(on): 0.18Ω (Max)

  • Power Dissipation: 125W

  • Gate Threshold Voltage: 2V – 4V

  • Operating Temperature: –55°C to +175°C

  • Mounting Type: Through-Hole

41.00 (Incl. GST)

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    Description

    The IRF640N is a high-voltage N-Channel Power MOSFET designed for fast switching and efficient power handling. With a drain-source voltage of 200V and a continuous drain current of 18A, it is widely used in SMPS power supplies, inverter stages, high-voltage drivers, and industrial control circuits.
    Its low RDS(on), fast switching capability, and rugged TO-220 package ensure reliable performance in demanding high-voltage applications.

    APPLICATION

    • SMPS power supplies

    • High-voltage DC-DC converters

    • Inverter circuits & UPS systems

    • Motor drivers

    • LED drivers

    • High-voltage switching

    • Industrial automation equipment

    • Power control circuits

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