Shop

BC337-40 NPN Transistor – High Gain TO-92 General Purpose Transistor

SKU: D100

In stock

25.00 (Incl. GST)

Specification

Product: BC337-40 NPN Transistor
Collector Current (DC) (A): 0.8
Junction Temperature (°C): 150
Collector-Base Voltage (Vcb) (V): 50
Collector-Emitter Voltage (Vce) (V): 45
Emitter-Base Voltage (Veb) (V): 5
DC Current Gain (hFE): 250 – 630
Power Dissipation (mW): 625
Transition Frequency (MHz): 100
Package Type: TO-92 (DIP)
Mounting Type: Through Hole

BC547 NPN DIP Transistor

SKU: D101

In stock

1.30 (Incl. GST)
  1. Product: BC547 NPN DIP Transistor
  2. Collector Current (DC) (A): 100
  3. Junction Temperature (°C): 150
  4. Collector-Base Voltage (Vcb) (V): 50
  5. Collector-Emitter Voltage (Vce) (V): 45

BC547 SMD Transistor – NPN General Purpose Switching & Amplifier IC

SKU: SIC-018

Out of stock

2.08 (Incl. GST)

Specifications

  • Transistor Type: NPN

  • Technology: Bipolar Junction Transistor (BJT)

  • Collector-Emitter Voltage (Vce): 45V

  • Collector-Base Voltage (Vcb): 50V

  • Emitter-Base Voltage (Veb): 6V

  • Continuous Collector Current (Ic): 100mA

  • Power Dissipation: 250mW

  • DC Current Gain (hFE): 110 to 800 (A/B/C variants)

  • Transition Frequency (fT): 100MHz (typical)

  • Operating Temperature Range: -55°C to +150°C

  • Package Type: SMD (SOT-23)

BC557 PNP Transistor

SKU: D102

In stock

2.00 (Incl. GST)

Features:

  • Bi-Polar PNP Transistor
  • DC Current Gain (hFE) is 300 maximum
  • Continuous Collector current (IC) is 100mA
  • Emitter Base Voltage (VBE) is 6V
  • Base Current(IB) is 5mA maximum
  • Available in To-92 Package

BC557 SMD (BC857) PNP Transistor – General Purpose SOT-23

SKU: SIC-019

In stock

2.08 (Incl. GST)

Specifications

  • Transistor Type: PNP

  • Technology: BJT (Bipolar Junction Transistor)

  • Collector-Emitter Voltage (Vce): -45V

  • Collector-Base Voltage (Vcb): -50V

  • Emitter-Base Voltage (Veb): -5V

  • Continuous Collector Current (Ic): -100mA

  • Power Dissipation: 250mW

  • DC Current Gain (hFE): 110 – 800 (A/B/C grades)

  • Transition Frequency (fT): 100MHz (typical)

  • Operating Temperature: -55°C to +150°C

  • Package Type: SMD (SOT-23)

BC635 NPN Transistor – High Current TO-92 General Purpose Transistor

SKU: D103

In stock

10.00 (Incl. GST)

Specification

Product: BC635 NPN Transistor
Collector Current (DC) (A): 1.0
Junction Temperature (°C): 150
Collector-Base Voltage (Vcb) (V): 80
Collector-Emitter Voltage (Vce) (V): 60
Emitter-Base Voltage (Veb) (V): 5
DC Current Gain (hFE): 40 – 160
Power Dissipation (mW): 800
Transition Frequency (MHz): 100
Package Type: TO-92 (DIP)
Mounting Type: Through Hole

BC636 PNP Transistor – High Voltage TO-92 General Purpose Transistor

SKU: D109

In stock

Original price was: ₹11.00.Current price is: ₹4.15. (Incl. GST)

Specification

Product: BC636 PNP Transistor
Collector Current (DC) (A): 1.0
Junction Temperature (°C): 150
Collector-Base Voltage (Vcb) (V): 80
Collector-Emitter Voltage (Vce) (V): 50
Emitter-Base Voltage (Veb) (V): 5
DC Current Gain (hFE): 40 – 160
Power Dissipation (mW): 800
Transition Frequency (MHz): 100
Package Type: TO-92 (DIP)
Mounting Type: Through Hole

BC857 PNP SMD Transistor

SKU: SIC-015

In stock

1.96 (Incl. GST)

Specifications

  • Transistor Type: PNP

  • Technology: Bipolar Junction Transistor (BJT)

  • Collector-Emitter Voltage (Vce): -45V

  • Collector-Base Voltage (Vcb): -50V

  • Emitter-Base Voltage (Veb): -5V

  • Continuous Collector Current (Ic): -100mA

  • Power Dissipation: 250mW

  • DC Current Gain (hFE): 110 to 800 (variant dependent)

  • Transition Frequency (fT): 100MHz (typical)

  • Operating Temperature Range: -55°C to +150°C

  • Package Type: SMD (SOT-23)

BD139 NPN Transistor – 1.5A 80V Medium Power Transistor TO-126

SKU: D108

In stock

17.00 (Incl. GST)

Specification

Product: BD139 NPN Transistor
Collector Current (DC) (A): 1.5
Junction Temperature (°C): 150
Collector-Base Voltage (Vcb) (V): 80
Collector-Emitter Voltage (Vce) (V): 80
Emitter-Base Voltage (Veb) (V): 5
DC Current Gain (hFE): 40 – 250
Power Dissipation (W): 1.25
Transition Frequency (MHz): 190
Package Type: TO-126
Mounting Type: Through Hole

BD140 PNP Transistor

SKU: D091

Out of stock

6.00 (Incl. GST)

BDW93C NPN Darlington Transistor – 100V 12A High-Gain Power Transistor (TO-220)

SKU: D162

In stock

24.00 (Incl. GST)

SPECIFICATION

  • Transistor Type: NPN Darlington

  • Package: TO-220

  • Collector–Emitter Voltage (Vce): 100V

  • Collector Current (Ic): 12A

  • DC Current Gain (hFE): 750–1000 (typical)

  • Power Dissipation: ~80W

  • Low saturation voltage

  • High switching capability

  • Integrated base-emitter resistor

  • Ideal for high-current control

BFD-1000 Five Channel Infrared Tracking Module Tracing Sensor

SKU: S-181

In stock

177.00 (Incl. GST)

Input voltage: 3.0 V – 5.5 V
Output form: digital output (high and low level)
Detection distance: 0 – 4 cm (black and white line sensors)
0 – 5 cm (adjustable distance detection)